InterFET U311 JFET JFET N沟道 -25V 低噪声

Technology: Si

Unit Weight: 1 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 60 mA

Forward Transconductance - Min: 1000 uS

Vgs - Gate-Source Breakdown Voltage: - 25 V