InterFET VCR2N JFET JFET N沟道 -15V 低噪声

Technology: Si

Unit Weight: 3.257 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: 3.5 V

Rds On - Drain-Source Resistance: 60 Ohms

Vgs - Gate-Source Breakdown Voltage: 15 V

Vds - Drain-Source Breakdown Voltage: 10 V