Intersil HFA3046BZ 射频双极小信号带退火TXARRAY 3X NPN + NPN 差分对

Width: 3.9 mm

Height: 0 mm

Length: 8.7 mm

Technology: Si

Unit Weight: 130 mg

Configuration: Quint

Transistor Type: Bipolar

Moisture Sensitive: Yes

Operating Frequency: 8 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 40 at 10 mA at 2 V

Gain Bandwidth Product fT: 8000 MHz (Typ)

Emitter- Base Voltage VEBO: 5.5 V

Collector- Base Voltage VCBO: 12 V

Continuous Collector Current: 65 mA

Maximum DC Collector Current: 65 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 8 V