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Width: 3.9 mm
Height: 0 mm
Length: 8.7 mm
Technology: Si
Unit Weight: 130 mg
Configuration: Quint
Transistor Type: Bipolar
Moisture Sensitive: Yes
Operating Frequency: 8 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 40 at 10 mA at 2 V
Gain Bandwidth Product fT: 8000 MHz (Typ)
Emitter- Base Voltage VEBO: 5.5 V
Collector- Base Voltage VCBO: 12 V
Continuous Collector Current: 65 mA
Maximum DC Collector Current: 65 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 8 V
