Intersil HFA3096BZ96 射频双极小信号带退火TXARRAY 3X NPN 2X PNP 16N

Width: 3.9 mm

Height: 0 mm

Length: 9.9 mm

Technology: Si

Unit Weight: 140 mg

Configuration: Quint

Transistor Type: Bipolar

Moisture Sensitive: Yes

Operating Frequency: 8 GHz, 5.5 GHz

Transistor Polarity: NPN/PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 40 at 10 mA at 2 V at NPN, 20 at 10 mA at 2 V at PNP

Gain Bandwidth Product fT: 8000 MHz

Emitter- Base Voltage VEBO: 5.5 V

Collector- Base Voltage VCBO: 12 V

Continuous Collector Current: 65 mA

Maximum DC Collector Current: 65 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 8 V