Intersil HFA3101BZ 射频双极小信号TXARRAY NPN GILBERT单元 8W

Width: 3.9 mm

Height: 0 mm

Length: 4.9 mm

Technology: Si

Unit Weight: 72 mg

Configuration: Hex

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 10 GHz

Transistor Polarity: NPN

DC Current Gain hFE Max: 40 at 10 mA at 3 V

Gain Bandwidth Product fT: 10000 MHz (Typ)

Emitter- Base Voltage VEBO: 5.5 V

Collector- Base Voltage VCBO: 12 V

Continuous Collector Current: 30 mA

Maximum DC Collector Current: 30 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 8 V