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Width: 1.7 mm
Height: 0 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 18 mg
Configuration: Dual
Transistor Type: Bipolar
Moisture Sensitive: Yes
Operating Frequency: 8.5 GHz
Transistor Polarity: NPN
DC Current Gain hFE Max: 48 at 10 mA at 2 V, 48 at 1 mA at 2 V, 48 at 0.1 mA at 2 V, 48 at 10 mA at 5 V, 48 at 1 mA at 5 V, 48 at 0.1 mA at 5 V
Gain Bandwidth Product fT: 8500 MHz (Typ)
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 12 V
Continuous Collector Current: 26 mA
Maximum DC Collector Current: 26 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
DC Collector/Base Gain hfe Min: 48
Collector- Emitter Voltage VCEO Max: 11 V
