ISSI IS25LP512M-PHLE NOR闪存 512Mbit 64M X 8bit 串行 3V 8.5ns 24针 TFBGA

Density: 512 Mbit

Package: 24TFBGA

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

Pin Count: 24

Boot Block: Yes

Interfaces: 4-Wire, DTR, QPI, SPI

Access Time: 8.5 ns

No. of Pins: 24

Timing Type: Synchronous

Architecture: Sectored

Organization: 64M x 8

Interface Type: Serial

Memory Density: 512 Mbit

Number of Words: 64 Mbit

Program Current: 35 mA

Screening Level: Extended

Supplier Package: TFBGA

Address Bus Width: 32 Bit

Block Organization: Symmetrical

Maximum Erase Time: 270/Chip s

Product Dimensions: 6 x 8 x 0.84 mm

Supply Voltage Max: 3.6 V

Supply Voltage Min: 2.3 V

Supply Voltage Nom: 3 V

Clock Frequency Max: 133 MHz

Max Processing Temp: 260 °C

Programming Voltage: 2.3 to 3.6 V

Operating Temperature: -40 to 105 °C

Location Of Boot Block: Bottom|Top

Number of Bits per Word: 8 Bit

Maximum Programming Time: 2/Page ms

Maximum Operating Current: 25 mA

Operating Temperature Max: 105 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 8.5 ns

Simultaneous Read/Write Support: No

Maximum Operating Supply Voltage: 3.6 V

Minimum Operating Supply Voltage: 2.3 V

Typical Operating Supply Voltage: 3 V

Erase Suspend/Resume Modes Support: Yes

Datasheet