ISSI IS26KS128S-DPBLI00 NOR闪存 128Mbit 16M X 8bit 并行 1.8V 96ns 24引脚 VFBGA 托盘

Density: 128 Mbit

Package: 24VFBGA

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

MSL Level: MSL 3 - 168 hours

Pin Count: 24

Boot Block: Yes

Access Time: 96 ns

Lead Finish: Tin-Silver-Copper

No. of Pins: 24

Timing Type: Synchronous

Architecture: Sectored

Interface Type: Parallel

Memory Density: 128 Mbit

Number of Words: 16 MWords

Program Current: 60 mA

Screening Level: Industrial

Supplier Package: VFBGA

Block Organization: Symmetrical

Maximum Erase Time: 115/Chip s

Product Dimensions: 8 x 6 x 0.64(Max) mm

Supply Voltage Max: 1.95 V

Supply Voltage Min: 1.7 V

Supply Voltage Nom: 1.8 V

Clock Frequency Max: 166 MHz

Max Processing Temp: 260 °C

Programming Voltage: 1.7 to 1.95 V

Operating Temperature: -40 to 85 °C

Location Of Boot Block: Bottom|Top

Number of Bits per Word: 8 Bit

Maximum Programming Time: 1.26/Word ms

Maximum Operating Current: 180 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 96 ns

Simultaneous Read/Write Support: No

Maximum Operating Supply Voltage: 1.95 V

Minimum Operating Supply Voltage: 1.7 V

Typical Operating Supply Voltage: 1.8 V

Erase Suspend/Resume Modes Support: No

Datasheet