IXYS ITF48IF1200HR IGBT晶体管盘 IGBT XPT-GenX3 ISOPLUS247

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 390 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 72 A

Collector-Emitter Saturation Voltage: 2.05 V

Continuous Collector Current at 25 C: 72 A