IXYS IXA20I1200PZ-TRL IGBT晶体管盘 IGBT XPT-GenX3 TO-263D2

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 165 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 38 A