IXYS IXA20RG1200DHG-TRR IGBT晶体管 IGBT模块 - XPT升压 - SMPD

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 125 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 32 A