IXYS IXA30PG1200DHG-TRR IGBT 硅模块 IXA30PG1200DHGLB-TRR
制造商IXYS(查看更多该品牌的产品)
ModelIXA30PG1200DHG-TRR
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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Pd - Power Dissipation: 150 W
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.9 V
Continuous Collector Current at 25 C: 43 A
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