IXYS IXA30PG1200DHGLB IGBT晶体管 XPT IGBT相腿

Technology: Si

Unit Weight: 8 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 150 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 43 A