IXYS IXA70R1200NA IGBT模块盘 IGBT XPT-GenX3 SOT-227B(迷你)
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ModelIXA70R1200NA
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Technology: Si
REACH - SVHC: Details
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 350 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 100 A
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