IXYS IXBA14N300HV IGBT晶体管 TO263 3KV 14A 高增益

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 200 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3 kV

Continuous Collector Current Ic Max: 120 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 38 A