IXYS IXBF20N360 IGBT晶体管 3600V/45A 反向导通IGBT

Width: 5.21 mm

Height: 21.34 mm

Length: 20.29 mm

Technology: Si

Unit Weight: 6.500 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 230 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3.6 kV

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 18 A