IXYS IXBH20N300 IGBT晶体管盘 IGBT BiMSFT-高压 TO-247AD

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Technology: Si

Unit Weight: 1.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3 kV

Continuous Collector Current Ic Max: 50 A

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 50 A