IXYS IXBH20N360HV IGBT晶体管盘 IGBT BiMSFT-高压 TO-247AD

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 430 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3.6 kV

Continuous Collector Current Ic Max: 220 A

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 70 A