IXYS IXBT2N250 IGBT晶体管 TO268 2500V 2A IGBT

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 32 W

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.5 kV

Continuous Collector Current Ic Max: 5 A

Collector-Emitter Saturation Voltage: 3.8 V

Continuous Collector Current at 25 C: 5 A