IXYS IXBT42N170 IGBT晶体管 BIMOSFET 1700V 75A

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Technology: Si

Unit Weight: 4.500 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 360 W

Continuous Collector Current: 70 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current Ic Max: 75 A

Collector-Emitter Saturation Voltage: 2.8 V

Continuous Collector Current at 25 C: 80 A