IXYS IXBT42N300HV IGBT晶体管 TO268 3KV 42A IGBT

Technology: Si

Unit Weight: 4 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 500 W

Gate-Emitter Leakage Current: +/- 200 nA

Maximum Gate Emitter Voltage: - 25 V, 25 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3 kV

Continuous Collector Current Ic Max: 104 A

Collector-Emitter Saturation Voltage: 3 V

Continuous Collector Current at 25 C: 104 A