IXYS IXFA5N100P 极性电源MOSFET HiPerFET 极性电源MOSFET HiPerFET

Width: 10.41 mm

Height: 4.83 mm

Length: 9.65 mm

Fall Time: 37 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 2.300 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 33.4 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.4 S

Rds On - Drain-Source Resistance: 2.8 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 6 V