IXYS IXFE180N20 MOSFET模块 180安培 200伏 0.01 Rds

Width: 25.42 mm

Height: 9.65 mm

Length: 38.23 mm

Fall Time: 36 ns

Rise Time: 85 ns

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 55 ns

Typical Turn-Off Delay Time: 180 ns

Id - Continuous Drain Current: 158 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V