IXYS IXFE36N100 MOSFET模块 33安培 1000伏 0.24 Rds

Width: 25.42 mm

Height: 9.65 mm

Length: 38.23 mm

Fall Time: 40 ns

Rise Time: 82 ns

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 580 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 81 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 33 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 240 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV