IXYS IXFE48N50QD2 MOSFET模块 41安培 500伏 0.11 Rds

Width: 25.42 mm

Height: 9.65 mm

Length: 38.23 mm

Fall Time: 10 ns

Rise Time: 22 ns

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 33 ns

Typical Turn-Off Delay Time: 75 ns

Id - Continuous Drain Current: 41 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V