IXYS IXFE55N50 MOSFET模块 52安培 500伏 0.08 Rds

Width: 25.42 mm

Height: 9.65 mm

Length: 38.23 mm

Fall Time: 45 ns

Rise Time: 60 ns

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 120 ns

Id - Continuous Drain Current: 47 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V