IXYS IXFL55N50 MOSFETs 55安培 500伏 0.08瓦 Rds

Technology: Si

Unit Weight: 10 g

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 80 mW

Id - Continuous Drain Current: 55 A

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V