IXYS IXFN180N25T GigaMOS 功率 MOSFET 155A 250V

Width: 25.42 mm

Height: 12.22 mm

Length: 38.23 mm

Fall Time: 20 ns

Rise Time: 52 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 900 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 88 ns

Id - Continuous Drain Current: 168 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12.9 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 3 V