IXYS IXFN210N20P HiperFET 188 安培 200伏 0.0105 Rds

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.07 kW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 188 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 10.5 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V