IXYS IXFN32N100Q3 HiperFET Q3Class HiPerFET 功率 MOSFET 1000V/28A
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ModelIXFN32N100Q3
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Rise Time: 300 ns
Technology: Si
Unit Weight: 30 g
Configuration: Single
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 780 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 28 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 320 mOhms
Vds - Drain-Source Breakdown Voltage: 1 kV
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