IXYS IXFN360N10T 功率MOSFET 360安培 100伏

Fall Time: 160 ns

Rise Time: 100 ns

Technology: Si

Unit Weight: 30 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 830 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 47 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 360 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.6 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V