IXYS IXFN70N100X MOSFET模块 1000V 65A SOT-227 功率MOSFET

Fall Time: 9 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.2 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 48 ns

Typical Turn-Off Delay Time: 127 ns

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 89 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V