IXYS IXFP7N80P Polar HiPerFET 功率 MOSFET 7 安培 800V 1.44 Rds

Width: 4.83 mm

Height: 16 mm

Length: 10.66 mm

Fall Time: 24 ns

Rise Time: 32 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 32 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 55 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 1.44 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 5 V