IXYS IXFQ8N85X MOSFETs DiscMSFT N沟道超结X级 TO-3P (3)

Fall Time: 23 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 17 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 8 A

Forward Transconductance - Min: 2.7 S

Rds On - Drain-Source Resistance: 850 mOhms

Vds - Drain-Source Breakdown Voltage: 850 V

Vgs th - Gate-Source Threshold Voltage: 3 V