IXYS IXFR24N90Q MOSFETs 22安培 900伏 0.47瓦 Rds

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 470 mW

Id - Continuous Drain Current: 22 A

Rds On - Drain-Source Resistance: 470 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V