IXYS IXFR64N60Q3 MOSFETs Q3Class HiPerFET 功率MOSFET 600V/42A

Rise Time: 300 ns

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 190 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 568 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 42 A

Rds On - Drain-Source Resistance: 104 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V