IXYS IXFT16N120P-TRL MOSFET场效应管 MOSFET分立器件

Fall Time: 35 ns

Rise Time: 28 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 120 nC

Number of Channels: 1 Channel

Pd - Power Dissipation: 660 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 66 ns

Id - Continuous Drain Current: 16 A

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 960 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V