IXYS IXFT70N30Q3 MOSFETs Q3Class HiPerFET 功率MOSFET 300V/70A

Rise Time: 250 ns

Technology: Si

Unit Weight: 6.500 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 98 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 830 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 70 A

Rds On - Drain-Source Resistance: 54 mOhms

Vds - Drain-Source Breakdown Voltage: 300 V