IXYS IXFX26N120P Polar HiPerFET 功率 MOSFET 32 安培 1200V 0.46 Rds

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Fall Time: 58 ns

Rise Time: 55 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 255 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 960 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 56 ns

Typical Turn-Off Delay Time: 76 ns

Id - Continuous Drain Current: 26 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13 S

Rds On - Drain-Source Resistance: 500 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 6.5 V