IXYS IXGA48N60A3 IGBT晶体管 48安培 600伏

Technology: Si

Unit Weight: 1.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 300 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 120 A