IXYS IXGA4N100 IGBT晶体管 8安培 1000伏 2.7 Rds

Width: 9.65 mm

Height: 4.83 mm

Length: 10.29 mm

Technology: Si

Unit Weight: 1.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1 kV

Continuous Collector Current Ic Max: 8 A