IXYS IXGH48N60B3D1 IGBT晶体管 75安培 600伏 1.05伏 Rds

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 300 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 48 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 280 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 48 A