IXYS IXGH64N60B3 IGBT晶体管 GenX3 600V

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.59 V

Continuous Collector Current at 25 C: 64 A