IXYS IXGK120N120B3 IGBT晶体管 200安培 1200伏

Technology: Si

Unit Weight: 13.675 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 830 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3 V

Continuous Collector Current at 25 C: 200 A