IXYS IXGK320N60B3 IGBT晶体管 GenX3 600V

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Technology: Si

Unit Weight: 10.600 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.7 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 500 A