IXYS IXGK35N120B IGBT晶体管 70安培 1200伏 3.3伏 Rds

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Technology: Si

Unit Weight: 10 g

Configuration: Single

Mounting Style: Through Hole

Continuous Collector Current: 70 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 70 A

Collector-Emitter Saturation Voltage: 3.3 V