IXYS IXGK50N60BU1 IGBT晶体管 75安培 600伏 2.3 Rds

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Technology: Si

Unit Weight: 10 g

Configuration: Single

Mounting Style: Through Hole

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 75 A