IXYS IXGK50N60C2D1 IGBT晶体管 50安培 600伏 2.5伏 Rds

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Technology: Si

Unit Weight: 10 g

Configuration: Single

Mounting Style: Through Hole

Continuous Collector Current: 75 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 75 A

Collector-Emitter Saturation Voltage: 2.5 V