IXYS IXGK75N250 IGBT晶体管 TO264 2500V 75A IGBT

Technology: Si

Unit Weight: 10 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 780 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.5 kV

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 170 A