IXYS IXGN320N60A3 IGBT晶体管 320安培 600伏

Width: 25.42 mm

Height: 9.6 mm

Length: 38.23 mm

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 735 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 320 A

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 320 A